Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity
Identifieur interne : 00C380 ( Main/Repository ); précédent : 00C379; suivant : 00C381Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity
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Abstract
Spontaneous emission characteristics of self-organized InAs/GaAs quantum dots embedded in a photonic-crystal-based microcavity are theoretically investigated. Results are obtained from a three-dimensional quasi-mode analysis of the photonic-crystal microcavity and through calculations of energy levels and eigenstates for electrons and holes in self-organized quantum dots. The spontaneous emission rate from quantum dots is significantly enhanced by up to a factor of 14, compared to that in free space. In addition, the maximum coupling efficiency to the fundamental mode is close to unity. © 2003 American Institute of Physics.
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Results are obtained from a three-dimensional quasi-mode analysis of the photonic-crystal microcavity and through calculations of energy levels and eigenstates for electrons and holes in self-organized quantum dots. The spontaneous emission rate from quantum dots is significantly enhanced by up to a factor of 14, compared to that in free space. 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